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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BA221 High-speed diode
Product specification Supersedes data of April 1996 1996 Sep 03
Philips Semiconductors
Product specification
High-speed diode
FEATURES * Hermetically sealed leaded glass SOD27 (DO-35) package * High switching speed: max. 4 ns * General application * Continuous reverse voltage: max. 30 V * Repetitive peak reverse voltage: max. 30 V * Repetitive peak forward current: max. 400 mA.
The diode is type branded.
handbook, halfpage k
BA221
DESCRIPTION The BA221 is a high-speed switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35) package.
a
MAM246
APPLICATIONS * High-speed switching.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 100 s t=1s Ptot Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board; lead length 10 mm. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 - - - - -65 - 9 3 1 350 +200 200 A A A mW C C see Fig.2; note 1 CONDITIONS MIN. - - - - MAX. 30 30 200 400 V V mA mA UNIT
1996 Sep 03
2
Philips Semiconductors
Product specification
High-speed diode
ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage see Fig.3 IF = 1 mA IF = 100 mA IF = 200 mA IR reverse current see Fig.5 VR = 10 V VR = 30 V VR = 10 V; Tj = 150 C VR = 30 V; Tj = 150 C Cd trr diode capacitance reverse recovery time f = 1 MHz; VR = 0; see Fig.6 when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 400 mA; tr = 30 ns; see Fig.8 - - - - - - 25 200 50 100 - - - 625 950 1050 CONDITIONS MIN. MAX.
BA221
UNIT mV mV mV nA nA A A pF ns
2.5 4
Vfr
forward recovery voltage
-
2.0
V
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 10 mm lead length 10 mm; note 1 VALUE 240 500 UNIT K/W K/W
1996 Sep 03
3
Philips Semiconductors
Product specification
High-speed diode
GRAPHICAL DATA
BA221
handbook, halfpage
300
MBG451
handbook, halfpage
600
MBG461
IF (mA) 200
IF (mA)
(1) (2) (3)
400
100
200
0 0 100 Tamb (oC) 200
0 0 (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Maximum permissible continuous forward current as a function of ambient temperature.
Fig.3
Forward current as a function of forward voltage.
102 handbook, full pagewidth IFSM (A)
MBG703
10
1
10-1 1 10
102
103
tp (s)
104
Based on square wave currents. Tj = 25 C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
4
Philips Semiconductors
Product specification
High-speed diode
BA221
103 handbook, halfpage IR (A)
MGD012
MGD002
handbook, halfpage
4
102
Cd (pF) 3
10
(1)
(2)
(3)
2 1
10-1
1
10-2 0 100 Tj (oC) 200
0 0 10 20 VR (V) 30
(1) VR = 30 V; maximum values. (2) VR = 30 V; typical values. (3) VR = 10 V; typical values.
f = 1 MHz; Tj = 25 C.
Fig.5
Reverse current as a function of junction temperature.
Fig.6
Diode capacitance as a function of reverse voltage; typical values.
1996 Sep 03
5
Philips Semiconductors
Product specification
High-speed diode
BA221
handbook, full pagewidth
tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90%
tp t
RS = 50 V = VR I F x R S
IF
IF
t rr t
(1)
MGA881
input signal
output signal
(1) IR = 1 mA.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 k
450
I 90%
V
R S = 50
D.U.T.
OSCILLOSCOPE R i = 50 10%
MGA882
V fr
t tr tp
t
input signal
output signal
Fig.8 Forward recovery voltage test circuit and waveforms.
1996 Sep 03
6
Philips Semiconductors
Product specification
High-speed diode
PACKAGE OUTLINE
BA221
handbook, full pagewidth
0.56 max 1.85 max 25.4 min 4.25 max 25.4 min
MLA428 - 1
Dimensions in mm.
Fig.9 SOD27 (DO-35).
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Sep 03
7

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